Substrate processing capable of suppressing a decrease in throughput while reducing the impact on exposure treatment caused by warping of a substrate

ABSTRACT

A substrate processing apparatus includes a film-forming device that forms a photosensitive film on a front surface of a substrate, a warping data acquisition device that acquires measured warping data of the substrate, a roughening process device that applies roughening process on a back surface of the substrate, and a control device including circuitry that controls the warping data acquisition device such that after the photosensitive film is formed on the front surface of the substrate, the warping data acquisition device acquires the measured warping data before the photosensitive film on the substrate undergoes exposure process, and control the roughening process device such that before the photosensitive film on the substrate undergoes the exposure process, the roughening process device applies the roughening process on the back surface of the substrate based on the measured warping data.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of and claims the benefit ofpriority to U.S. application Ser. No. 15/421,565, filed Feb. 1, 2017,which is a divisional of and claims the benefit of priority to U.S.application Ser. No. 14/632,544, filed Feb. 26, 2015, now U.S. Pat. No.9,601,394, issued Mar. 21, 2017, which is based upon and claims thebenefit of priority to Japanese Patent Applications No. 2014-042707,filed Mar. 5, 2014, and No. 2014-265759, filed Dec. 26, 2014. The entirecontents of these applications are incorporated herein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a substrate processing apparatus, asubstrate processing method and a memory medium.

Description of Background Art

JP H10-199947A describes a method for measuring the degree of warping ofa wafer by using the automatic focusing mechanism of a stepper exposuresystem. The entire contents of this publication are incorporated hereinby reference.

SUMMARY OF THE INVENTION

According to one aspect of the present invention, a substrate processingsystem includes a film-forming device which forms a photosensitive filmon a front surface of a substrate, an exposure device which exposes thephotosensitive film formed on the substrate, a relay device which ispositioned between the film-forming device and the exposure device andtransfers the substrate between the film-forming device and the exposuredevice, a warping data acquisition device which acquires measuredwarping data of the substrate, a communication device which performsdata communication with the exposure device, and a control deviceincluding a film-forming control sub-device, a relay control sub-device,a measuring control sub-device, and a communication control sub-device.The film-forming control sub-device controls the film-forming devicesuch that the film-forming device forms the photosensitive film on thefront surface of the substrate, the relay control sub-device controlsthe relay device such that the relay device transfers the substratehaving the photosensitive film to the exposure device, the measuringcontrol sub-device controls the warping data acquisition device suchthat the warping data acquisition device acquires the measured warpingdata after the controlling by the film-forming control sub-device priorto the controlling by the relay control sub-device, and thecommunication control sub-device controls the communication device suchthat the communication device transmits the measured warping data to theexposure device.

According to another aspect of the present invention, a substrateprocessing system includes a film-forming device which forms aphotosensitive film on a front surface of a substrate, an exposuredevice which exposes the photosensitive film formed on the substrate, arelay device which is positioned between the film-forming device and theexposure device and transfers the substrate between the film-formingdevice and the exposure device, a warping data acquisition device whichacquires measured warping data of the substrate, a roughening processdevice which applies roughening process on a back surface of thesubstrate, and a control device including a film-forming controlsub-device, a relay control sub-device, a measuring control sub-device,and a process control sub-device. The film-forming control sub-devicecontrols the film-forming device such that the film-forming device formsthe photosensitive film on the front surface of the substrate, the relaycontrol sub-device controls the relay device such that the relay devicetransfers the substrate having the photosensitive film to the exposuredevice, the measuring control sub-device controls the warping dataacquisition device such that the warping data acquisition deviceacquires the measured warping data after the controlling by thefilm-forming control sub-device prior to the controlling by the relaycontrol sub-device, and the process control sub-device controls theroughening process device such that the roughening process deviceapplies the roughening process on the back surface of the substratebased on the measured warping data after the controlling by themeasuring control sub-device prior to the controlling by the relaycontrol sub-device.

According to yet another aspect of the present invention, a method forprocessing a substrate includes forming a photosensitive film on a frontsurface of a substrate, acquiring measured warping data of the substratehaving the photosensitive film formed thereon, transferring thesubstrate having the photosensitive film to an exposure device afteracquisition of the measured warping data, and transmitting the measuredwarping data to the exposure device.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same becomes betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings, wherein:

FIG. 1 shows a perspective view of a substrate processing systemaccording to an embodiment of the present invention;

FIG. 2 shows a cross-sectional view taken at the (II-II) line in FIG. 1;

FIG. 3 shows a cross-sectional view taken at the (III-III) line in FIG.2;

FIG. 4 shows a cross-sectional view taken at the (IV-IV) line in FIG. 3;

FIG. 5 is a view schematically showing a BSI unit;

FIG. 6 is a diagram showing the functional structure of a controldevice;

FIG. 7 is a flowchart showing steps for executing a substrate processingmethod;

FIG. 8 is a view schematically showing the BSI unit performing aback-surface inspection;

FIG. 9 is a view schematically showing the BSI unit performing basepoint detection;

FIG. 10 is a view schematically showing the BSI unit measuring thedistance to the back surface;

FIG. 11 shows a cross-sectional view taken at the (XI-XI) line in FIG.10;

FIGS. 12(a)-12(e) show views schematically illustrating procedures formeasuring a distance;

FIGS. 13(a)-13(f) show views schematically illustrating procedures foradsorbing a wafer;

FIG. 14 shows a cross-sectional view of a substrate processing systemaccording to a second embodiment of the present invention;

FIG. 15 is a perspective view schematically showing the structure of aroughening process unit;

FIG. 16 is a diagram showing the functional structure of a controldevice;

FIG. 17 is a flowchart showing steps for executing a substrateprocessing method;

FIG. 18 is a view schematically showing a roughening process unit when awafer is loaded:

FIG. 19 is a view schematically showing the roughening process unitpolishing the central portion of the back surface of a wafer;

FIG. 20 is a view schematically showing the roughening process unitwhere the central portion of a wafer is adsorbed; and

FIG. 21 is a view schematically showing the roughening process unitpolishing the periphery of the back surface of a wafer.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The embodiments will now be described with reference to the accompanyingdrawings, wherein like reference numerals designate corresponding oridentical elements throughout the various drawings.

First Embodiment

Substrate Processing System

Substrate processing system 1 according to a first embodiment isprovided with coating/development apparatus 2 and exposure device 3.Exposure device 3 performs exposure treatment on a resist film(photosensitive film). More specifically, using an immersion exposuremethod or the like, energy beams are irradiated on a portion of theresist film to be exposed. Examples of energy beams are ArF excimerlaser, KrF excimer laser, g-line, i-line and extreme ultraviolet (EUV).

Coating/development apparatus 2 (substrate processing apparatus)performs a resist film forming process on the front surface of a wafer(W) (substrate) prior to exposure treatment by exposure device 3, andperforms a resist film developing treatment after the exposuretreatment. As shown in FIGS. 1-4, coating/development apparatus 2 isprovided with carrier block 4, processing block 5, interface block 6,control device 100, and communication device 200. Carrier block 4,processing block 5 and interface block 6 are arrayed horizontally.

Carrier block 4 has carrier station 12 and loading/unloading device 13.Loading/unloading device 13 is disposed between carrier station 12 andprocessing block 5.

Carrier station 12 supports multiple carriers 11. Carrier 11hermetically accommodates multiple wafers (W), and is provided with adoor (not shown) for loading/unloading a wafer (W) on the side surface(11 a) side. Carrier 11 is placed on carrier station 12 to be detachablefrom the carrier station in such a way that side surface (11 a) facesloading/unloading device 13.

Loading/unloading device 13 has multiple doors (13 a) respectivelycorresponding to multiple carriers 11 on carrier station 12. By openingthe door on side surface (11 a) and door (13 a) simultaneously, theinner side of carrier 11 and the inner side of loading/unloading device13 are connected. Loading/unloading device 13 accommodates delivery arm(A1), which unloads a wafer (W) from carrier 11 to deliver it toprocessing block 5, and receives a wafer (W) from processing block 5 toreturn it to carrier 11.

Processing block 5 includes bottom-layer film forming (BCT) module 14,resist film forming (COT) module 15, top-layer film forming (TCT) module16 and development (DEV) module 17. Those modules are stacked in theorder of DEV module 17, BCT module 14, COT module 15 and TCT module 16from the floor side.

BCT module 14 accommodates multiple coating units (not shown), multiplethermal treatment units (not shown), and a transfer arm (A2) to transfera wafer (W) to those units, and forms a bottom-layer film on the frontsurface of a wafer (W). A coating unit coats a wafer (W) with a chemicalsolution for forming a bottom-layer film. A thermal treatment unitapplies heat to the wafer (W) by using a hot plate, for example, andcools the wafer (W) by using a cooling plate, for example. One specificexample of a thermal treatment conducted in BCT module 14 is a thermaltreatment for curing the chemical solution.

As shown in FIG. 3, COT module 15 accommodates multiple coating units(U1), multiple thermal treatment units (U2) and a transfer arm (A3) totransfer a wafer (W) to those units, and forms a resist film on thebottom-layer film. Namely, COT module 15 works as a film-forming deviceto form a photosensitive film. Coating unit (U1) coats a chemicalsolution for forming a resist film on a bottom-layer film. Thermaltreatment unit (U2) applies heat to a wafer (W) by using a hot plate,for example, and cools the wafer (W) by using a cooling plate, forexample. More specifically, pre-applied bake (PAB) is conducted forcuring the chemical solution in COT module 15, for example.

TCT module 16 accommodates multiple coating units (not shown) andmultiple thermal treatment units (not shown) and a transfer arm (A4) totransfer a wafer (W) to those units, and forms a top-layer film on theresist film. A coating unit coats the front surface of a wafer (W) witha chemical solution for forming a top-layer film. A thermal treatmentunit applies heat to a wafer (W) by using a hot plate, for example, andcools the wafer (W) by using a cooling plate, for example. Morespecifically, TCT module 16 conducts, for example, a thermal treatmentfor curing the chemical solution.

As shown in FIG. 4, DEV module 17 accommodates multiple developmentunits (U3), multiple thermal treatment units (U4), a transfer arm (A5)to transfer a wafer (W) to those units, and a direct-transfer arm (A6)to transfer a wafer (W) without detouring to those units. Developmentunit (U3) develops the exposed resist film. Thermal treatment unit (U4)applies heat to a wafer (W) by using a hot plate, for example, and coolsthe wafer (W) by using a cooling plate, for example. More specifically,thermal treatment before developing treatment (PEB: post-exposure bake),thermal treatment after developing treatment (PB: post bake) and thelike are conducted in DEV module 17.

On the carrier block 4 side of processing block 5, shelf unit (U10) isprovided. Shelf unit (U10) is formed to extend from the floor surface toTCT module 16, and is divided into multiple cells which are arranged ina vertical direction. Elevator arm (A7) is provided near shelf unit(U10). Elevator arm (A7) lifts/lowers a wafer (W) among cells in shelfunit (U10). On the interface block 6 side of processing block 5, shelfunit (U11) is provided. Shelf unit (U11) is formed to extend from thefloor surface to the upper portion of DEV module 17 and is divided intomultiple cells which are arranged in a vertical direction.

Interface block 6 accommodates a delivery arm (A8) and back-surfaceinspection (BSI) unit 20, and is connected to exposure device 3.Delivery arm (A8) transfers a wafer (W) from shelf unit (U11) to BSIunit 20, delivers the wafer (W) to exposure device 3, and receives awafer (W) from exposure device 3 to return it to shelf unit (U11).Interface block 6 corresponds to a relay device disposed between COTmodule 15 (film-forming device) and exposure device 3.

BSI unit 20 works as a warping data acquisition device to acquiremeasured warping data of a wafer (W). As shown in FIG. 5, BSI unit 20has transfer device 30, holding device 40, back-surface inspectiondevice 50, measuring device 60 and base point detection device 70.

Transfer device 30 includes sliding table 31 and actuator 32. Actuator32 has a built-in power source such as an electric motor, and movessliding table 31 along a horizontal straight axis (L1).

Holding device 40 is fixed on sliding table 31 with multiple posts 33disposed in between, and is used to hold the periphery of a wafer (W).Holding device 40 includes support plate 41, turntable 42 and actuator43. Support plate 41 is positioned horizontally and is fixed on multipleposts 33. In the region of support plate 41 surrounded by multiple posts33, opening (41 a) is formed. The inner diameter of opening (41 a) isset greater than the outer diameter of a wafer (W).

Turntable 42 is horizontally positioned on support plate 41, and hasopening (42 a) corresponding to opening (41 a). The inner diameter ofopening (42 a) is set greater than the outer diameter of a wafer (W).Turntable 42 is set to be rotatable around the center axis of openings(41 a, 42 a). Actuator 43 has a built-in power source such as anelectric motor or the like to rotate turntable 42.

Multiple (six, for example) holding hooks 44 are formed on the peripheryof opening (42 a). Multiple holding hooks 44 are positioned to surroundopening (42 a), and each protrudes toward the center of opening (42 a).A wafer (W) is positioned on opening (42 a) with its front surface (Wa)facing upward. Multiple holding hooks 44 support the periphery of thewafer (W) positioned on opening (42 a). The periphery of a wafer (W)indicates, for example, a circumferential portion that is within 3 mm ofthe periphery. Holding device 40 supports a wafer (W) using holdinghooks 44, but does not constrain the wafer (W) on holding hooks 44.

Back-surface inspection device 50 is positioned under holding device 40,and is used to detect contaminants attached to the back surface of awafer (W). Back-surface inspection device 50 detects contaminants byusing images, and has lighting source 51, imaging device 52 and multiplemirrors (53, 54).

Lighting source 51 irradiates back surface (Wb) of a wafer (W) held byholding device 40. Mirrors (53, 54) direct the image of back surface(Wb) to imaging device 52. Imaging device 52 acquires the image directedby mirrors (53, 54). Lighting source 51, imaging device 52 and mirrors(53, 54) are fixed to positions that do not interfere with sliding table31, posts 33 and holding device 40. Thus, as transfer device 30 moves awafer (W), an image taken by imaging device 52 of back-surfaceinspection device 50 changes accordingly.

Measuring device 60 is used to measure warping of a wafer (W) held byholding device 40. More specifically, measuring device 60 is positionedunder a wafer (W) (on the back-surface side) held by holding device 40,and measures the distance to back surface (Wb). Measuring device 60 isfixed in a position that does not interfere with sliding table 31, posts33 and holding device 40. Thus, as transfer device 30 moves a wafer (W),portions measured by measuring device 60 change accordingly.

Measuring device 60 is a laser displacement gauge to measure thedistance to back surface (Wb) by using laser light, for example, and haslaser light source 61 and light receiver 62 (see FIG. 11). Laser lightsource 61 and light receiver 62 are horizontally arranged side by side.The direction in which light source 61 and light receiver 62 are arrayedintersects with (at a right angle, for example) the direction in which awafer (W) is transferred by transfer device 30.

Laser light source 61 irradiates laser light onto back surface (Wb) of awafer (W). Light receiver 62 obtains the light reflected at theirradiated spot of the back surface. By a triangulation method using thelight emitting direction of laser light from laser light source 61 toback surface (Wb) and the light incidence direction from the irradiatedspot to light receiver 62, measuring device 60 measures the distance tothe irradiated spot. Measuring device 60 moves laser irradiation spotsalong a direction to face the direction in which laser light source 61and light receiver 62 are arrayed (the direction perpendicular to adirection in which a wafer (W) is transferred by transfer device 30),and measures the distance to the irradiated spots.

BSI unit 20 acquires the measured values obtained by measuring device60. The measured values include the self-weight factor of a wafer (W).Thus, BSI unit 20 conducts calculations to remove the self-weight factorof a wafer (W) from the measured values obtained by measuring device 60.As a result of such calculations, BSI unit 20 obtains measured warpingdata.

Base point detection device 70 is used to detect the alignment base of awafer (W). More specifically, base point detection device 70 detects anotch (Wc) formed on the periphery of a wafer (W) as an alignment base.Base point detection device 70 has light source 71 and light receiver72, and detects a notch (We) by determining whether the emitted lightfrom light source 71 reaches light receiver 72.

Communication device 200 is used to perform data communication withexposure device 3.

Control device 100 is structured with one or multiple computers and isused to control coating/development apparatus 2. Control device 100 hasa display section (not shown) to display a screen for setting theconditions of each treatment, an input section (not shown) for inputtingconditions for each treatment, and a readout section (not shown) forreading a program from a computer readable memory medium. The memorymedium stores programs for coating/development apparatus 2 to execute asubstrate processing method. Those programs are read by the readoutsection of control device 100. Examples of a memory medium are a harddisk, a compact disc, flash memory, a flexible disk, a memory card andthe like. Control device 100 controls coating/development apparatus 2according to the conditions inputted into the input section and theprogram read by the readout section.

FIG. 6 is a diagram showing individual functions as virtual elements tobe achieved when programs are executed (hereinafter referred to as“functional blocks”). As shown in FIG. 6, control device 100 hasfilm-forming control sub-device 111, development control sub-device 112,back-surface inspection control sub-device 113, alignment controlsub-device 114, measuring control sub-device 115, communication controlsub-device 116 and relay control sub-device 117 as functional blocks.

Film-forming control sub-device 111 controls BCT module 14 to form abottom-layer film on front surface (Wa) of a wafer (W), controls COTmodule 15 to form a resist film on the bottom-layer film, and controlsTCT module 16 to form a top-layer film on the resist film.

Development control sub-device 112 controls DEV module 17 to performdeveloping treatment on the resist film after the exposure treatment.

After the process controlled by film-forming control sub-device 111 butbefore the process controlled by measuring control sub-device 115,back-surface inspection control sub-device 113 controls BSI unit 20 sothat back-surface inspection device 50 inspects to see if there arecontaminants attached to back surface (Wb) of a wafer (W).

Alignment control sub-device 114 controls BSI unit 20 before the processcontrolled by measuring control sub-device 115 so that notch (We) of awafer (W) is detected by base point detection device 70 and the wafer(W) is aligned.

After the process controlled by film-forming control sub-device 111 butbefore the process controlled by relay control sub-device 117, measuringcontrol sub-device 115 controls BSI unit 20 to acquire the measuredwarping data.

Communication control sub-device 116 controls communication device 200to transmit the measured data acquired by BSI unit 20 to exposure device3.

Relay control sub-device 117 controls interface block 6 so that a wafer(W) is transferred by delivery arm (A8) to exposure device 3, and awafer (W) is received by delivery arm (A8) from exposure device 3.

Substrate Processing Method

In the following, a substrate processing method using substrateprocessing system 1 is described with reference to FIG. 7. First,film-forming control sub-device 111 controls coating/developmentapparatus 2 so that a bottom-layer film, a resist film and a top-layerfilm are formed on front surface (Wa) of a wafer (W) (step S1). Specificoperations of coating/development apparatus 2 are as follows.

Delivery arm (A1) transfers a wafer (W) in carrier 11 to shelf unit(U10). The wafer (W) is placed by elevator arm (A7) into a cell for BCTmodule 14, and is transferred by transfer arm (A2) to each unit in BCTmodule 14. The coating unit coats front surface (Wa) with a chemicalsolution for forming a bottom-layer film. The thermal-treatment unitperforms thermal treatment to cure the chemical solution. When thebottom-layer film is formed, transfer arm (A2) returns the wafer (W) toshelf unit (U10).

The wafer (W) is placed by elevator arm (A7) into a cell for COT module15, and is transferred by transfer arm (A3) to each unit in COT module15. Coating unit (U1) coats the front surface (Wa) with a chemicalsolution for forming a resist film. Thermal-treatment unit (U2) performsthermal treatment (PAB) or the like to cure the chemical solution. Whenforming a resist film is completed, transfer arm (A3) returns the wafer(W) to shelf unit (U10).

The wafer (W) is placed by elevator arm (A7) into a cell for TCT module16, and transferred by transfer arm (A4) to each unit in TCT module 16.The coating unit coats the front surface (Wa) with a chemical solutionfor forming a top-layer film. The thermal-treatment unit performsthermal treatment or the like to cure the chemical solution. Whenforming the top-layer film is completed, transfer arm (A4) returns thewafer (W) to shelf unit (U10).

Next, back-surface inspection control sub-device 113 controlscoating/development apparatus 2, and inspects back surface (Wb) of thewafer (W) to determine whether contaminants are attached thereon (stepS2). More specifically, coating/development apparatus 2 operates asfollows.

The wafer (W) returned to shelf unit (U10) by transfer arm (A4) isplaced by elevator arm (A7) into a cell for DEV module 17, andtransferred to shelf unit (U11) by direct transfer arm (A6). The wafer(W) is loaded into BSI unit 20 and is placed on holding device 40 bydelivery arm (A8).

BSI unit 20 moves the wafer (W) by using transfer device 30 to changeimaging spots so that back-surface inspection device 50 inspects whetherthere are contaminants attached thereon (see FIG. 8). Lighting source 51of back-surface inspection device 50 illuminates back surface (Wb).Mirrors (53, 54) direct the image of the portion illuminated by lightingsource 51 to imaging device 52 so that imaging device 52 acquires theimage. Back-surface inspection device 50 executes an imaging process todetect contaminants from the image obtained by imaging device 52.

Next, alignment control sub-device 114 controls coating/developmentapparatus 2 to align the wafer (W) (step S3). More specifically,coating/development apparatus 2 operates as follows. Namely, after aninspection for contaminants is completed, the wafer (W) is transferredby transfer device 30 so that the periphery of the wafer (W) ispositioned between light source 71 and light receiver 72 of base pointdetection device 70 (see FIG. 9). Except for when the notch (Wc) ispositioned between light source 71 and light receiver 72, the light fromlight source 71 is blocked by the periphery of the wafer (W) and doesnot reach light receiver 72. If light does not reach light receiver 72,actuator 43 rotates turntable 42 and stops the rotation when the lightfrom light source 71 does reach light receiver 72 (see FIGS. 12(a) and12(b)). Accordingly, the notch (We) of the wafer (W) is positionedbetween light source 71 and light receiver 72, and the wafer (W) isaligned.

Next, measuring control sub-device 115 controls coating/developmentapparatus 2 and obtains the measured warping data of the wafer (W) (stepS4). More specifically, coating/development apparatus 2 operates asfollows. Namely, as holding device 40 holds the periphery of the wafer(W), transfer device 30 transfers the wafer (W) to multiple measuringspots. When the wafer (W) is placed in each measuring spot, measuringdevice 60 measures the distance to back surface (Wb) (see FIG. 10).

Laser light source 61 of measuring device 60 irradiates laser light toback surface (Wb), and light receiver 62 of measuring device 60 receivesthe light reflected at the irradiated spot (see FIG. 11). By atriangulation method using the light emitting direction of laser lightfrom laser light source 61 to back surface (Wb) and the light incidencedirection from the irradiated spot to light receiver 62, measuringdevice 60 measures the distance to the irradiated spot. Measuring device60 moves laser light source 61 and light receiver 62 to change laserirradiation spots in a direction perpendicular to axis (L1) (thedirection in which a wafer (W) is transferred by transfer device 30),and measures the distance to the irradiated spots. By transferring thewafer (W) along axis (L1) while moving irradiation spots along a lineperpendicular to axis (L1), measurements are obtained along multiplemeasurement lines (L2) perpendicular to axis (L1) (see FIG. 12(c)).

When the acquisition of data measured along measurement line (L2) isfinished, actuator 43 rotates turntable 42 and the wafer (W) 90 degrees(see FIG. 12(d)). Then, the same as above, transfer device 30 transfersthe wafer (W) to multiple measuring spots and measuring device 60measures the distance to back surface (Wb) every time the wafer (W) isplaced at each measuring spot. Accordingly, the distance is measuredalong multiple measurement lines (L3) perpendicular to measurement lines(L2) (see FIG. 12(e)). As a result, in addition to transferring a wafer(W) along axis (L1) while moving irradiation spots along a lineperpendicular to axis (L1), by further rotating the wafer (W),measurements are obtained along grid lines. Here, measurement lines (L2,L3) may be set to avoid contaminants detected in step (S2).

BSI unit 20 conducts calculations to remove the self-weight factor ofthe wafer (W) from the measurement values obtained by measuring device60, and obtains the calculation results as measured warping data.

Next, communication control sub-device 116 controls coating/developmentapparatus 2 to transmit measured warping data of the wafer (W) toexposure device 3 (step S5). More specifically, coating/developmentapparatus 2 operates as follows. Namely, communication device 200transmits to exposure device 3 the measured warping data of the wafer(W) obtained by BSI unit 20.

Next, relay control sub-device 117 controls coating/developmentapparatus 2, and transfers the wafer (W) to exposure device 3 (step S6).More specifically, coating/development apparatus 2 operates as follows.Namely, delivery arm (A8) in interface block 6 unloads a wafer (W) fromBSI unit 20 and transfers the wafer to exposure device 3 (loads thewafer (W) into exposure device 3).

Next, exposure device 3 receives measured warping data of the wafer (W),and sets a release region of the wafer (W) based on the measured data(step S7). For example, when the deviation is greater than apredetermined threshold value, such a region is set as release region(R1) (see FIG. 13(a)).

The wafer (W) is adsorbed onto a mounting plate in exposure device 3(step S8, see FIG. 13(b)). At that time, release region (R1) may beforced flat while the periphery of release region (R1) is constrainedfrom moving. In such a case, since release region (R1) is forced to besmaller, the size of release region (R1) changes before and after theadsorption process. Change in size decreases the accuracy of exposuretreatment (for example, dimensional accuracy of the pattern formed byexposure treatment).

Therefore, exposure device 3 releases adsorption in release region (R1)and in region (R2) which extends from release region (R1) to theperiphery of the wafer (W) (step S9, see FIG. 13(c)).

Next, exposure device 3 again adsorbs release region (R1) by expandingadsorption region (R3) of the wafer (W) toward the peripheral side ofthe wafer (W) (step S10, see FIGS. 13(d)˜13(f)). As a result, releaseregion (R1) is adsorbed again while its edge along the periphery of thewafer (W) is opened. Accordingly, a decrease in the size of releaseregion (R1) is suppressed.

Next, exposure device 3 performs exposure treatment on the resist film(step S11). Relay control sub-device 117 controls coating/developmentapparatus 2, and receives the wafer (W) from exposure device 3 (stepS12). More specifically, coating/development apparatus 2 operates asfollows. Delivery arm (A8) of interface block 6 receives the wafer (W)from exposure device 3 after exposure treatment and transfers it toshelf unit (U11).

Next, development control sub-device 112 controls coating/developmentapparatus 2, and performs developing treatment on the resist film (stepS13). More specifically, coating/development apparatus 2 operates asfollows. Namely, transfer arm (A5) transfers the wafer (W) in shelf unit(U11) to thermal-treatment unit (U4) in DEV module 17. Thermal-treatmentunit (U4) performs thermal treatment (PEB) on the wafer (W). When PEB iscompleted, transfer arm (A5) transfers the wafer (W) to development unit(U3). Development unit (U3) supplies a developing solution and a rinsingsolution to the front surface of the wafer (W) and performs developingtreatment on the resist film. When developing treatment is completed,transfer arm (A5) transfers the wafer (W) again to thermal-treatmentunit (U4). Thermal-treatment unit (U4) performs thermal treatment (PB)on the wafer (W). When PB is completed, transfer arm (A5) transfers thewafer (W) to shelf unit (U10). Elevator arm (A7) places the wafer (W)into a delivery cell and delivery arm (A1) returns the wafer (W) tocarrier 11.

A substrate processing method is completed. Steps (S7)˜(S11) areperformed by controlling exposure device 3. Such controls are conductedby a control device (not shown) for exposure device 3. The programs forexposure device 3 to execute steps (S7)˜(S11) are stored in a computerreadable memory medium and read out by the control device for exposuredevice 3. Examples of a memory medium are a hard disk, a compact disc,flash memory, a flexible disk, a memory card and the like.

As described so far, coating/development apparatus 2 transmits measuredwarping data of a wafer (W) to exposure device 3. The measured warpingdata are obtained after the film is formed (after the photosensitivefilm is formed). The degree of warping of a wafer (W) after the film isformed is approximately the same degree of warping of the wafer shortlybefore the wafer is transferred to exposure device 3. Thus, the measureddata transmitted to exposure device 3 are effective in reducing theimpact on exposure treatment caused by warping of a wafer (W). Inaddition, measured warping data are measured before the wafer (W) istransferred to exposure device 3. Thus, measured data are obtained afterthe film is formed on a wafer (W) while the wafer waits for its turn tobe transferred to exposure device 3. Accordingly, coating/developmentapparatus 2 is capable of reducing the impact on exposure treatmentcaused by warping of a wafer (W), and of suppressing a decrease inthroughput.

For example, as shown in a substrate processing method using substrateprocessing system 1, change in the size of a wafer (W) caused byadsorption is suppressed, and accuracy of exposure treatment isenhanced.

BSI unit 20 has holding device 40 to hold the periphery of a wafer (W),and measuring device 60 to measure warping of a wafer (W) held byholding device 40. Since measured warping data are affected by theself-weight of a wafer (W), calculations to remove the self-weightfactor from the measured values are conducted to determine the degree ofwarping of the wafer (W). To obtain measured values, if the periphery ofa wafer (W) is held, the self-weight factor of the wafer (W) is easierto estimate, thereby making it easier to measure the degree of warping.

Measuring device 60 is disposed on the back surface (Wb) side of a wafer(W) held by holding device 40, and it measures the distance to backsurface (Wb). Thus, measuring device 60 is capable of determining thedistance without being affected by irregular patterns formed on thefront surface (Wa) of a wafer (W). Accordingly, warping of the wafer (W)is determined even more accurately.

BSI unit 20 is further provided with back-surface inspection device 50to detect contaminants attached to back surface (Wb). Thus, BSI unit 20is also used for inspection of contaminants, thus contributing to makingthe apparatus smaller.

BSI unit 20 is further provided with transfer device 30 to transfer awafer (W) so as to change spots where back-surface inspection device 50takes images. Measuring device 60 moves irradiation spots of laser lightin a direction intersecting the direction in which a wafer (W) is movedby transfer device 30, and measures the distance to the irradiatedspots. Thus, in a transfer direction of a wafer (W), irradiation spotsof laser light are moved when the wafer (W) is transferred by transferdevice 30, whereas in a direction intersecting the transfer direction,irradiation spots of laser light are moved by measuring device 60.Accordingly, irradiation spots of laser light are set in a wider rangeof a wafer (W). Transfer device 30 is effectively used for inspection ofcontaminants, and measurement is conducted on a wider range.

Back-surface inspection device 113 controls BSI unit 20 so thatback-surface inspection device 50 inspects contaminants before theprocess controlled by measuring control sub-device 115. Thus,measurement spots can be set by measuring device 60 to avoidcontaminants, and more accurate data are obtained to determine warpingof the wafer (W).

Measuring device 60 may be disposed on the front surface (Wa) side of awafer (W) to measure the distance to the front surface (Wa). It is anoption for BSI unit 20 not to be accommodated in interface block 6, butrather to be accommodated in any module in processing block 5. It issufficient for coating/development apparatus 2 to have a film-formingdevice for forming a photosensitive film, a relay device, a warping dataacquisition device and a communication device, and a control device tocontrol those devices. It is an option for coating/development apparatus2 to include BCT module 14, TCT module 16 and DEV module 17. It is alsoan option for the warping data acquisition device not to includeback-surface inspection device 50, and to be used exclusively forobtaining measured warping data.

Procedures in the substrate processing method above may be conducted indifferent orders. For example, alignment of a wafer (W) (step S3) may beconducted before back-surface inspection (step S2), transferring a wafer(W) (step S6) may be conducted before transmitting the measured data(step S5), or setting release region (R1) (step S7) may be conductedbefore transferring the wafer (W) (step S6). Setting release region (R1)(step S7) may be conducted in coating/development apparatus 2 beforetransmitting measured data (step S5), and release region (R1) may betransmitted to exposure device 3 along with measured warping data.Back-surface inspection (step S2) and distance measurement (step S4) maybe conducted simultaneously; that is, back-surface inspection controlsub-device 113 controls BSI unit 20 so that back-surface inspectiondevice 50 inspects contaminants at the same time as the processcontrolled by measuring control sub-device 115 is conducted. A decreasein throughput is certainly suppressed.

Second Embodiment

Substrate Processing System

As shown in FIG. 14, in substrate processing system (1A) according to asecond embodiment, coating/development apparatus 2 of substrateprocessing system 1 is replaced with coating/development apparatus (2A).In coating/development apparatus (2A), roughening process unit 300 isadded to coating/development apparatus 2 and control device 100 isreplaced with control device (100A).

Roughening process unit 300 is an example of a roughening process deviceto roughen the back surface of a wafer (W). Roughening means to roughena surface by polishing, for example. As shown in FIG. 15, rougheningprocess unit 300 has periphery holding mechanism 310, center holdingmechanism 320 and polishing mechanism 330.

Periphery holding mechanism 310 holds the periphery of a wafer (W) andtransfers the wafer along a horizontal straight line. In the following,a direction along the straight line is referred to as a transferdirection of a wafer (W). Periphery holding mechanism 310 is providedwith support plate 311, a pair of adsorbable holding devices (312, 312),a pair of beam members (313, 313), and a pair of transfer devices (314,314). Support plate 311 is in a ring shape, and its inner diameter isset greater than the outer diameter of a wafer (W). A pair of adsorbableholding devices (312, 312) is positioned along the inner periphery ofsupport plate 311. Adsorbable holding devices (312, 312) are positionedto face each other in a direction perpendicular to the transferdirection of a wafer (W), and each protrudes toward the center ofsupport plate 311. Adsorbable holding devices (312, 312) support a wafer(W) from under the wafer and hold the wafer by vacuum adsorption, forexample. Beam members (313, 313) are arranged along the transferdirection of a wafer (W) to be perpendicular to the transfer directionof a wafer (W). Beam members (313, 313) support the outer periphery ofsupport plate 311. Transfer devices (314, 314) support both ends of beammembers (313, 313), and move in a transfer direction of a wafer (W) sothat the wafer (W) supported by adsorbable holding devices (312, 312) istransferred.

Center holding mechanism 320 is positioned between transfer devices(314, 314), and holds and rotates the central portion of a wafer (W).Center holding mechanism 320 includes adsorbable holding device 321 andelevator/rotary device 322. Adsorbable holding device 321 supports thecentral portion of a wafer (W) from under the wafer, and holds the waferby vacuum adsorption, for example. Elevator/rotary device 322 supportsadsorbable holding device 321 from under the device. Elevator/rotarydevice 322 has a built-in elevation power source such as an air cylinderor a solenoid and a rotation power source such as an electric motor, andlifts/lowers/rotates adsorbable holding device 321.

Polishing mechanism 330 is arranged to be positioned side by side withcenter holding mechanism 320 along the transfer direction of a wafer(W), and polishes back surface (Wb) of a wafer (W) held by peripheryholding mechanism 310 or center holding mechanism 320 so that the backsurface is roughened. Polishing mechanism 330 is provided with polishingplate 331, rotary drive device 332, elevator device 334, transfer device335, and transfer device 336. Polishing plate 331 is in a disc shape andpolishes an object using its upper surface (331 a). Rotary drive device332 supports polishing plate 331 from under the plate. Rotary drivedevice 332 has power source 333 such as an electric motor. Power source333 rotates polishing plate 331 around the vertical axis. Elevatordevice 334 supports rotary drive device 332 from under the device.Elevator device 334 has a built-in power source such as an air cylinderor a solenoid for lifting/lowering rotary drive device 332, andpolishing plate 331 is lifted/lowered accordingly. Transfer device 335supports elevator device 334 from under the device. Transfer device 335has a built-in power source such as an electric motor, and transferselevator device 334 in the transfer direction of a wafer (W). As aresult, polishing plate 331 moves in the transfer direction of a wafer(W). Transfer device 336 supports transfer device 335 from undertransfer device 335. Transfer device 336 has a built-in power sourcesuch as an electric motor, and moves transfer device 335 in a directionperpendicular to the transfer direction of a wafer (W). Accordingly,polishing plate 331 moves in a direction perpendicular to the transferdirection of a wafer (W).

As shown in FIG. 16, control device (100A) is obtained by addingprocessing control sub-device 118 to control device 100. Processingcontrol sub-device 118 is also a functional block, not a block of ahardware structure. Processing control sub-device 118 controlsroughening process unit 300 so that roughening is performed on backsurface (Wb) of a wafer (W) based on measured warping data of the wafer(W).

Substrate Processing Method

As shown in FIG. 17, a substrate processing method using substrateprocessing system (1A) includes steps (S21)˜(S24) corresponding to(S1)˜(S4) described above, step (S25), and steps (S26)˜(S34)corresponding to the above steps (S5)˜(S13).

In step (S25), processing control sub-device 118 controls rougheningprocess unit 300 so that back surface (Wb) of a wafer (W) is roughenedbased on the measured warping data of the wafer (W) obtained in step(S24). For example, based on the measured warping data, processingcontrol sub-device 118 controls roughening process unit 300 to roughenback surface (Wb) when back surface (Wb) is found to be in a concaveshape, but not to roughen back surface (Wb) in other conditions.

Namely, the substrate processing method using substrate processingsystem (1A) includes roughening back surface (Wb) of a wafer (W) basedon the measured warping data of the wafer (W) after the processcontrolled by measuring control sub-device 115 but before the processcontrolled by relay control sub-device 117. In the substrate processingmethod, based on the measured warping data, back surface (Wb) of a wafer(W) is roughened when back surface (Wb) is found to be in a concaveshape, but is not roughened in other conditions.

As shown in FIG. 18, when back surface (Wb) is roughened, processingcontrol sub-device 118 controls delivery arm (A8) so that a wafer (W) isplaced on adsorbable holding devices (312, 312) and then controlsroughening process unit 300 so that the wafer (W) is adsorbed byadsorbable holding devices (312, 312).

Next, processing control sub-device 118 controls roughening process unit300 so that transfer devices (314, 314) transfer the wafer (W) to placethe center of the wafer (W) on polishing plate 331 as shown in FIG. 19.Then, processing control sub-device 118 controls roughening process unit300 so that rotary drive device 332 rotates polishing plate 331 andelevator device 334 lifts polishing plate 331, pressing upper surface(331 a) of rotating polishing plate 331 against back surface (Wb). As aresult, the central portion of back surface (Wb) is polished androughened. Moreover, processing control sub-device 118 controlsroughening process unit 300 to move polishing plate 331 by transferdevice 335 and transfer device 336. Accordingly, the range to beroughened is enlarged.

Processing control sub-device 118 controls roughening process unit 300so that polishing plate 331 is lowered by elevator device 334, a wafer(W) is transferred by transfer devices (314, 314), and the centralportion of the wafer (W) is positioned on adsorbable holding device 321.Processing control sub-device 118 controls roughening process unit 300so that adsorption by adsorbable holding devices (312, 312) is released,adsorbable holding device 321 is lifted by elevator/rotary device 322,and the wafer (W) is adsorbed by adsorbable holding device 321.

Next, processing control sub-device 118 controls roughening process unit300 so that the wafer (W) is rotated by elevator/rotary device 322 asshown in FIG. 21. Then, processing control sub-device 118 controlsroughening process unit 300 so that polishing plate 331 is rotated byrotary drive device 332 and polishing plate 331 is lifted by elevatordevice 334, pressing upper surface (331 a) of rotating polishing plate331 against back surface (Wb). As a result, the periphery of backsurface (Wb) is polished and roughened. Moreover, processing controlsub-device 118 controls roughening process unit 300 so that polishingplate 331 is moved by transfer device 335. Accordingly, the range to beroughened is enlarged. As described above, since the central portion ofback surface (Wb) is already roughened, when the processing range in theperiphery of back surface (Wb) is enlarged, the entire region of backsurface (Wb) is roughened. The roughening process of back surface (Wb)is completed.

As described above, coating/development apparatus (2A) is furtherprovided with roughening process unit 300 for roughening back surface(Wb) of a wafer (W). Control device (100A) further includes processingcontrol sub-device 118 that controls roughening process unit 300 so thatback surface (Wb) of a wafer (W) is roughened based on measured warpingdata after the process controlled by measuring control sub-device 115but before the process controlled by relay control sub-device 117.

When a warped wafer (W) is positioned on a mounting plate of exposuredevice 3, the wafer (W) is forced flat during the adsorption process orthe like. At that time, if back surface (Wb) of the wafer (W) does notslide well on the mounting plate of exposure device 3, the degree ofdistortion of wafer (W) increases when it is made flat, and accuracy maydecrease during the exposure treatment. By contrast, by roughening backsurface (Wb) of a wafer (W), Coulomb's force decreases between themounting plate of exposure device 3 and back surface (Wb) of the wafer(W), and the back surface will slide well. As a result, a decrease inexposure accuracy caused by distortion of the wafer (W) is suppressed.In addition, by roughening a wafer (W) based on the measured warpingdata, the roughening process is set at an appropriate degree, and adecrease in throughput is suppressed. Accordingly, coating/developmentapparatus (2A) is also effective in suppressing a decrease in throughputwhile reducing the impact on exposure treatment caused by warping of awafer (W).

For example, based on the measured warping data, processing controlsub-device 118 may control roughening process unit 300 in such a waythat back surface (Wb) is roughened when it is found to be concaveshape, but is not roughened in other conditions.

When no warping is found on back surface (Wb), distortion of a wafer (W)is unlikely to occur on the mounting plate of exposure device 3. Whenback surface (Wb) of a wafer (W) is in a convex shape, its centralportion first touches the mounting plate of exposure device 3. Thus, theperiphery of the wafer (W) is less likely to be constrained when thewafer is adsorbed on the surface, and distortion tends not to occur inthe wafer. When back surface (Wb) of a wafer (W) is in a concave shape,the periphery of the wafer (W) first touches the mounting plate ofexposure device 3. Thus, the periphery of the wafer (W) is more likelyto be constrained from moving when the wafer (W) is adsorbed onto themounting plate, and distortion of the wafer (W) tends to occur.Therefore, back surface (Wb) is roughened only when the back surface isfound to be in a concave shape so that a decrease in throughput issuppressed while the impact on exposure treatment is also suppressed.

However, processing control sub-device 118 may also control processingunit 300 to roughen back surface (Wb) even when no warping is found onthe back surface or when the back surface is in a convex shape. Byroughening back surface (Wb) in all conditions, the impact caused bywarping of a wafer (W) further decreases during the exposure treatment.Moreover, roughening process unit 300 may be controlled to lower theroughening degree on the back surface (Wb) when no warping is found onthe back surface or the back surface (Wb) is in a convex shape, comparedwith the roughening degree of the back surface (Wb) when the backsurface (Wb) is in a concave shape. Alternatively, roughening processunit 300 may be controlled so that the roughening degree on back surface(Wb) of a wafer (W) is the same in all the conditions.

So far, embodiments of the present invention have been described.However, the present invention is not limited to the above, and variousmodifications are possible within a scope that does not deviate from thegist of the present invention. For example, in a structure that includesroughening process unit 300 as in coating/development apparatus (2A),communication control sub-device 116 and communication device 200 arenot always necessary. Also, in a substrate processing method usingsubstrate processing system (1A), transmitting measured warping data ofa wafer (W) to exposure device 3 (step S26) and adsorbing the wafer (W)again in exposure device 3 based on the measured data (steps S28˜S31)are not always required. Even when communication control sub-device 116and communication device 200 are not provided, using coating/developmentapparatus (2A) is effective in suppressing a decrease in throughputwhile lowering the impact of warping of a wafer (W) during the exposuretreatment.

A substrate to be processed is not limited to a semiconductor wafer. Forexample, it may be a glass substrate, a mask substrate or a flat paneldisplay (FPD).

In the process for manufacturing semiconductors, procedures such as filmforming, exposure and development are performed on wafers (substrates).During those procedures, warping may occur in a wafer. Using a methodfor measuring warping described in JP H10-199947A, since exposuretreatment is not conducted while the degree of warping is measured,throughput may decrease.

The substrate processing apparatuses, substrate processing methods and amemory medium according to embodiments of the present invention arecapable of suppressing a decrease in throughput while lowering theimpact of substrate warping during the exposure treatment.

A substrate processing apparatus according to an embodiment of thepresent invention is provided with the following: a film-forming deviceto form a photosensitive film on a front surface of a substrate; a relaydevice disposed between the film-forming device and an exposure device;a warping data acquisition device to obtain measured warping data of asubstrate; a communication device to conduct data communication with theexposure device; and a control device to control the film-formingdevice, relay device, warping data acquisition device and communicationdevice. The control device includes the following: a film-formingcontrol sub-device for controlling the control device to form aphotosensitive film on a front surface of a substrate; a relay controlsub-device for controlling the relay device to transfer a substrate tothe exposure device; a measuring control sub-device for controlling thewarping data acquisition device to obtain measured warping data afterthe process controlled by the film-forming control sub-device but beforethe process controlled by the relay control sub-device; and acommunication control sub-device for controlling the communicationdevice to transmit the measured warping data to the exposure device.

In the substrate processing apparatus, the measured warping data of asubstrate are transmitted to the exposure device. The measured warpingdata are obtained after the film is formed (after the photosensitivefilm is formed). The degree of warping of a substrate after the film isformed is approximately the same as the degree of warping of thesubstrate shortly before the exposure treatment. Thus, the measured datatransmitted to the exposure device are effective in reducing the impactof substrate warping during exposure treatment. In addition, measuredwarping data are measured before the substrate is transferred to theexposure device. Thus, measured data are obtained after the film isformed on a substrate while the substrate waits for its turn to betransferred to the exposure device. Accordingly, the substrateprocessing apparatus is effective in suppressing a decrease inthroughput while lowering the impact of warping of a substrate duringthe exposure treatment.

The substrate processing apparatus may further include a rougheningprocess device to roughen the back surface of a substrate. The controldevice may also include a processing control sub-device that controlsthe roughening process device so that, after the process controlled bythe measuring control sub-device but before the process controlled bythe relay control sub-device, the back surface of a substrate isroughened based on the measured warping data.

In such a case, a communication control sub-device and a communicationdevice are not always required to be provided. Namely, a substrateprocessing apparatus may be structured to have the following: afilm-forming device to form a photosensitive film on the front surfaceof a substrate; a relay device disposed between the film-forming deviceand an exposure device; a warping data acquisition device to obtainmeasured warping data of a substrate; a roughening process device toroughen the back surface of a substrate. Also, the control device mayinclude the following: a film-forming control sub-device for controllingthe film-forming device to form a photosensitive film on the frontsurface of a substrate; a measuring control sub-device for controllingthe warping data acquisition device to obtain measured warping dataafter the process controlled by the film-forming control sub-device; aprocessing control sub-device for controlling the roughening processdevice to roughen the back surface of a substrate based on the measuredwarping data after the process controlled by the measuring controlsub-device; and a relay control sub-device for controlling the relaydevice to transfer a substrate to the exposure device after the processcontrolled by the processing control sub-device.

When a warped substrate is positioned on a mounting plate of theexposure device, the substrate is forced flat during the adsorptionprocess or the like. At that time, if the back surface of the substratedoes not slide well on the mounting plate of the exposure device, thedegree of distortion increases when the substrate is made flat, andaccuracy may decrease during the exposure treatment. By contrast, byroughening the back surface of a substrate, Coulomb's force decreasesbetween the mounting plate of the exposure device and the back surfaceof the substrate, and the sliding of the back surface is enhanced. As aresult, a decrease in accuracy of exposure treatment caused bydistortion of the substrate is suppressed. In addition, by roughening asubstrate based on the measured warping data, the roughening process isset at an appropriate degree, and a decrease in throughput issuppressed. Accordingly, the substrate processing apparatus is alsoeffective in suppressing a decrease in throughput while lowering theimpact from the warping of a substrate during the exposure treatment.

The warping data acquisition device may have a holding device to holdthe periphery of a substrate and a measuring device to measure thewarping of a substrate held by the holding device. Since the measuredvalue of warping is affected by the self-weight of a substrate,calculations to remove the self-weight factor from the measured valuesare conducted to determine the degree of warping of the substrate. Toobtain measured values, if the periphery of a substrate is held, theself-weight factor of the substrate is easier to estimate, therebymaking it easier to measure the degree of warping of the substrate.

The measuring device may be positioned on the back side of a substrateheld by the holding device to measure the distance to the back surface.In such a case, since the measuring device is capable of determining thedistance without being affected by concavo-convex patterns formed on thefront surface of a substrate, the degree of warping of the substrate isdetermined even more accurately.

The warping data acquisition device may further be provided with aback-surface inspection device to detect contaminants attached to theback surface. Thus, the warping data acquisition device is also used forinspecting contaminants, thereby contributing to making the apparatussmaller.

The measuring device may be a laser displacement gauge that uses laserlight to measure the distance to the back surface, or the back surfaceinspection device may be an image inspection device that detectscontaminants from the images.

The warping data acquisition device may further include a transferdevice to transfer a substrate so that the spots whose images are takenby the back surface inspection device are changed. The measuring devicemay move laser irradiation spots in a direction that intersects with thedirection in which the substrate is transferred by the transfer device,and may measure the distance to the irradiation spots.

In such a case, in a direction along the transfer direction, laserirradiation spots may be changed by moving the substrate using thetransfer device, whereas in a direction that intersects with thetransfer direction, laser irradiation spots may be moved by themeasuring device. Accordingly, laser irradiation spots on a substratemay be moved in a wider range. Thus, the transfer device to be used forcontaminant inspection may be used effectively to perform measurement ina wider range.

The control device may further include a back-surface inspection controlsub-device for controlling the warping data acquisition device so thatthe back-surface inspection device inspects contaminants after theprocess controlled by the film-forming control sub-device but before theprocess controlled by the measuring control sub-device. In such a case,spots to be measured by the measuring device are set to avoidcontaminants, and more accurate data are obtained to determine thedegree of warping of the substrate.

A substrate processing method according to an embodiment of the presentinvention includes forming a photosensitive film on a front surface of asubstrate; transferring the substrate to an exposure device; after thephotosensitive film is formed but before the substrate is transferred tothe exposure device, obtaining measured warping data of the substrate;and transmitting the measured warping data to the exposure device.

In the substrate processing method, measured warping data of a substrateare transmitted to an exposure device. The measured warping data areobtained after a film is formed (after the formation of a photosensitivefilm). The degree of warping of a substrate after the film is formed isapproximately the same as the degree of warping of the substrate shortlybefore the exposure treatment. Thus, the measured data transmitted tothe exposure device are effective in reducing the impact on exposuretreatment caused by warping of a substrate. In addition, measuredwarping data are obtained before the substrate is transferred to theexposure device. Thus, measured data are obtained after the film isformed on a substrate while the substrate waits for its turn to betransferred to the exposure device. Accordingly, the substrateprocessing method is effective in reducing the impact on exposuretreatment caused by warping of a substrate while suppressing a decreasein throughput.

After measured warping data of a substrate are obtained, but before thesubstrate is transmitted to the exposure device, a roughening process onthe substrate back surface may be conducted based on the measuredwarping data.

In such a case, transmitting the measured warping data to the exposuredevice is not always required. Namely, the substrate processing methodmay include: forming a photosensitive film on a front surface of asubstrate; obtaining measured warping data of the substrate after thephotosensitive film is formed; after the measured warping data areobtained, roughening the substrate back surface based on the measuredwarping data; and transferring the substrate to the exposure deviceafter the substrate back surface is roughened.

When a warped substrate is positioned on a mounting plate of theexposure device, the substrate is forced flat during the adsorptionprocess or the like. At that time, if the substrate back surface doesnot slide well on the mounting plate of the exposure device, the degreeof distortion increases when the substrate is made flat, and accuracymay decrease during the exposure treatment. By contrast, by rougheningthe substrate back surface, Coulomb's force decreases between themounting plate of the exposure device and the substrate back surface,and sliding between those surfaces is improved. As a result, a decreasein the exposure accuracy caused by distortion of the substrate issuppressed. In addition, by roughening a substrate based on the measuredwarping data, the roughening process is set at an appropriate degree,and a decrease in throughput is suppressed. Accordingly, the substrateprocessing apparatus is also effective in suppressing a decrease inthroughput while reducing the impact on exposure treatment caused bywarping of a substrate.

Based on the measured warping data, the back surface of a substrate isroughened when it is found to be in a concave shape, but it is an optionnot to perform a roughening process on the back surface in otherconditions.

When no warping is found on the back surface, distortion of a substrateis unlikely to occur on the mounting plate of the exposure device. Whenthe back surface of a substrate is in a convex shape, its centralportion first touches the mounting plate of the exposure device. Thus,the periphery of the substrate is less likely to be constrained frommoving when the wafer is adsorbed on the surface, and distortion tendsnot to occur in the substrate. When the back surface of a substrate isin a concave shape, the periphery touches first the mounting plate ofthe exposure device. Thus, the periphery of the substrate is more likelyto be constrained from moving during the adsorption process, anddistortion of the substrate tends to occur. Therefore, the back surfaceis roughened only when it is found to be in a concave shape so that adecrease in throughput is suppressed while the impact on exposuretreatment is also reduced.

The substrate processing method may further include the following: basedon the measured warping data of a substrate, setting a release region onthe substrate; after the substrate is loaded into the exposure deviceand is adsorbed thereon, releasing the adsorption on the release regionand on the region extending from the release region to the substrateperiphery; adsorbing the release region again by expanding the adsorbedregion of the substrate toward the periphery; and performing exposuretreatment after the release region is adsorbed again. By so setting, theimpact on exposure treatment caused by warping of a substrate isreduced.

The memory medium according to an embodiment of the present invention isa computer readable memory medium that stores a program for theapparatus to execute the above substrate processing methods.

The substrate processing apparatuses, substrate processing methods, anda memory medium according to the embodiment of the present invention arecapable of suppressing a decrease in throughput while reducing theimpact on exposure treatment caused by warping of a substrate.

Obviously, numerous modifications and variations of the presentinvention are possible in light of the above teachings. It is thereforeto be understood that within the scope of the appended claims, theinvention may be practiced otherwise than as specifically describedherein.

What is claimed is:
 1. A substrate processing apparatus, comprising: afilm-forming device configured to form a photosensitive film on a frontsurface of a substrate comprising a wafer; a warping data acquisitiondevice configured to acquire measured warping data of the substrate; aroughening process device configured to apply roughening process on aback surface of the substrate; and a control device comprising circuitryconfigured to control the warping data acquisition device such thatafter the photosensitive film is formed on the front surface of thesubstrate, the warping data acquisition device acquires the measuredwarping data before the photosensitive film on the substrate undergoesexposure process, and control the roughening process device such thatbefore the photosensitive film on the substrate undergoes the exposureprocess, the roughening process device applies the roughening process onthe back surface of the substrate based on the measured warping data. 2.The substrate processing apparatus according to claim 1, wherein theroughening process device comprises a periphery holding deviceconfigured to hold a peripheral portion of the substrate, a centerholding device configured to hold a center portion of the substrate, anda polishing device configured to polish the back surface of thesubstrate such that the back surface of the substrate is roughened, andthe circuitry of the control device is configured to control theperiphery holding device and the polishing device such that thepolishing device polishes a center portion of the back surface of thesubstrate while the periphery holding device is holding the peripheralportion of the substrate, and control the center holding device and thepolishing device such that the polishing device polishes a peripheralportion of the back surface of the substrate while the center holdingdevice is holding the center portion of the substrate.
 3. The substrateprocessing apparatus according to claim 2, wherein the center holdingdevice comprises an adsorbable holding device configured to hold thecenter portion of the substrate and a rotary device configured to rotatethe adsorbable holding device, and the circuitry of the control deviceis configured to control the center holding device and the polishingdevice such that the polishing device polishes the peripheral portion ofthe back surface of the substrate while the adsorbable holding deviceholds the center portion of the substrate and the rotary device rotatesthe substrate.
 4. The substrate processing apparatus according to claim1, wherein the circuitry of the control device is configured to controlthe roughening process device such that when no warping is found on theback surface of the substrate or the back surface of the substrate isfound to be in a convex shape, the roughening process device lowers aroughening degree on the back surface of the substrate with respect to aroughening degree of the back surface of the substrate in a concaveshape.
 5. The substrate processing apparatus according to claim 4,wherein the circuitry of the control device is configured to control theroughening process device such that when no warping is found on the backsurface of the substrate or the back surface of the substrate is foundto be in the convex shape, the roughening process device does not applythe roughening process on the back surface of the substrate and thatwhen the back surface of the substrate is found to be in the concaveshape, the roughening process device applies the roughening process onthe back surface of the substrate.
 6. The substrate processing apparatusaccording to claim 2, wherein the circuitry of the control device isconfigured to control the roughening process device such that when nowarping is found on the back surface of the substrate or the backsurface of the substrate is found to be in a convex shape, theroughening process device lowers a roughening degree on the back surfaceof the substrate with respect to a roughening degree of the back surfaceof the substrate in a concave shape.
 7. The substrate processingapparatus according to claim 6, wherein the circuitry of the controldevice is configured to control the roughening process device such thatwhen no warping is found on the back surface of the substrate or theback surface of the substrate is found to be in the convex shape, theroughening process device does not apply the roughening process on theback surface of the substrate and that when the back surface of thesubstrate is found to be in the concave shape, the roughening processdevice applies the roughening process on the back surface of thesubstrate.
 8. The substrate processing apparatus according to claim 3,wherein the circuitry of the control device is configured to control theroughening process device such that when no warping is found on the backsurface of the substrate or the back surface of the substrate is foundto be in a convex shape, the roughening process device lowers aroughening degree on the back surface of the substrate with respect to aroughening degree of the back surface of the substrate in a concaveshape.
 9. The substrate processing apparatus according to claim 8,wherein the circuitry of the control device is configured to control theroughening process device such that when no warping is found on the backsurface of the substrate or the back surface of the substrate is foundto be in the convex shape, the roughening process device does not applythe roughening process on the back surface of the substrate and thatwhen the back surface of the substrate is found to be in the concaveshape, the roughening process device applies the roughening process onthe back surface of the substrate.
 10. A method of processing asubstrate, comprising: forming a photosensitive film on a front surfaceof a substrate comprising a wafer; after the photosensitive film isformed on the front surface of the substrate, acquiring measured warpingdata before the photosensitive film on the substrate undergoes exposureprocess; and before the photosensitive film on the substrate undergoesthe exposure process, applying roughening process on a back surface ofthe substrate based on the measured warping data.
 11. The method ofprocessing a substrate according to claim 10, wherein the applying ofthe roughening process comprises polishing a center portion of the backsurface of the substrate while holding a peripheral portion of thesubstrate, and polishing a peripheral portion of the back surface of thesubstrate while holding the center portion of the substrate.
 12. Themethod of processing a substrate according to claim 11, wherein thepolishing of the peripheral portion of the back surface of the substratecomprises polishing the peripheral portion of the back surface of thesubstrate while holding the center portion of the substrate and rotatingthe substrate.
 13. The method of processing a substrate according toclaim 10, wherein when no warping is found on the back surface of thesubstrate or the back surface of the substrate is found to be in aconvex shape, the applying of the roughening process comprises loweringa roughening degree on the back surface of the substrate with respect toa roughening degree of the back surface of the substrate in a concaveshape.
 14. The method of processing a substrate according to claim 13,wherein when no warping is found on the back surface of the substrate orthe back surface of the substrate is found to be in the convex shape,the applying of the roughening process comprises not applying theroughening process on the back surface of the substrate, and when theback surface of the substrate is found to be in the concave shape, theapplying of the roughening process comprises applying the rougheningprocess on the back surface of the substrate.
 15. The method ofprocessing a substrate according to claim 11, wherein when no warping isfound on the back surface of the substrate or the back surface of thesubstrate is found to be in a convex shape, the applying of theroughening process comprises lowering a roughening degree on the backsurface of the substrate with respect to a roughening degree of the backsurface of the substrate in a concave shape.
 16. The method ofprocessing a substrate according to claim 15, wherein when no warping isfound on the back surface of the substrate or the back surface of thesubstrate is found to be in the convex shape, the applying of theroughening process comprises not applying the roughening process on theback surface of the substrate, and when the back surface of thesubstrate is found to be in the concave shape, the applying of theroughening process comprises applying the roughening process on the backsurface of the substrate.
 17. The method of processing a substrateaccording to claim 12, wherein when no warping is found on the backsurface of the substrate or the back surface of the substrate is foundto be in a convex shape, the applying of the roughening processcomprises lowering a roughening degree on the back surface of thesubstrate with respect to a roughening degree of the back surface of thesubstrate in a concave shape.
 18. A non-transitory computer readablemedium including a program, which causes circuitry of a control deviceof a substrate processing apparatus to execute a method of processing asubstrate, comprising: forming a photosensitive film on a front surfaceof a substrate comprising a wafer; after the photosensitive film isformed on the front surface of the substrate, acquiring measured warpingdata before the photosensitive film on the substrate undergoes exposureprocess; and before the photosensitive film on the substrate undergoesthe exposure process, applying roughening process on a back surface ofthe substrate based on the measured warping data.
 19. The non-transitorycomputer readable medium according to claim 18, wherein when no warpingis found on the back surface of the substrate or the back surface of thesubstrate is found to be in a convex shape, the applying of theroughening process comprises lowering a roughening degree on the backsurface of the substrate with respect to a roughening degree of the backsurface of the substrate in a concave shape.
 20. The non-transitorycomputer readable medium according to claim 19, wherein when no warpingis found on the back surface of the substrate or the back surface of thesubstrate is found to be in the convex shape, the applying of theroughening process comprises not applying the roughening process on theback surface of the substrate, and when the back surface of thesubstrate is found to be in the concave shape, the applying of theroughening process comprises applying the roughening process on the backsurface of the substrate.